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Comparison Samsung DDR3 1x4Gb M378B5173EB0-CK0 vs GOODRAM DDR3 1x4Gb GR1600D364L11S/4G

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Samsung DDR3 1x4Gb M378B5173EB0-CK0
GOODRAM DDR3 1x4Gb GR1600D364L11S/4G
Samsung DDR3 1x4Gb M378B5173EB0-CK0GOODRAM DDR3 1x4Gb GR1600D364L11S/4G
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Memory capacity4 GB4 GB
Memory modules11
Form factorDIMMDIMM
TypeDDR3DDR3
Specs
Memory speed1600 MHz1600 MHz
Clock speed12800 MB/s12800 MB/s
CAS latencyCL11CL11
Memory timing11-11-1111-11-11-28
Voltage1.5 V1.5 V
Coolingno coolingno cooling
Module profilestandardstandard
Added to E-Catalogmay 2015february 2014

Memory timing

Timing is a term that refers to the time it takes to complete an operation. To understand the timing scheme, you need to know that structurally RAM consists of banks (from 2 to 8 per module), each of which, in turn, has rows and columns, like a table; when accessing memory, the bank is selected first, then the row, then the column. The timing scheme shows the time during which the four main operations are performed when working with RAM, and is usually written in four digits in the format CL-Trcd-Trp-Tras, where

CL is the minimum delay between receiving a command to read data and the start of their transfer;

Trcd — the minimum time between the selection of a row and the selection of a column in it;

Trp is the minimum time to close a row, that is, the delay between the signal and the actual closing. Only one bank line can be opened at a time; Before opening the next line, you must close the previous one.

Tras — the minimum time the row is active, in other words, the shortest time after which the row can be commanded to close after it has been opened.

Time in the timing scheme is measured in cycles, so the actual memory performance depends not only on the timing scheme, but also on the clock frequency. For example, 1600 MHz 8-8-8-24 memory will run at the same speed as 800 MHz 4-4-4-12 memory—in either case timings, if expressed in nanoseconds, will be 5-5-5-15.
Samsung DDR3 1x4Gb often compared
GOODRAM DDR3 1x4Gb often compared