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Comparison Samsung DDR4 1x4Gb M378A5244CB0-CRC vs Hynix DDR4 1x4Gb HMA851U6AFR6N-UHN0

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Samsung DDR4 1x4Gb M378A5244CB0-CRC
Hynix DDR4 1x4Gb HMA851U6AFR6N-UHN0
Samsung DDR4 1x4Gb M378A5244CB0-CRCHynix DDR4 1x4Gb HMA851U6AFR6N-UHN0
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Good compatibility with AMD Ryzen processors. High overclocking potential.
Memory capacity4 GB4 GB
Memory modules11
Form factorDIMMDIMM
TypeDDR4DDR4
Memory ranksingle rank
Specs
Memory speed2400 MHz2400 MHz
Clock speed19200 MB/s19200 MB/s
CAS latencyCL17CL15
Memory timing17-17-1715-15-15
Voltage1.2 V1.2 V
Coolingno coolingno cooling
Module profilestandardstandard
Color
Added to E-Catalogfebruary 2017october 2016

Memory rank

The number of ranks provided in the memory bar.

The rank in this case is called one logical module — a chipset with a total capacity of 64 bits. If there is more than one rank, this means that several logical ones are implemented on one physical module, and they use the data transmission channel alternately. A similar design is used in order to achieve large amounts of RAM with a limited number of slots for individual brackets. At the same time, it should be said that for consumer computers, you can not pay much attention to the memory rank — more precisely, peer-to-peer modules are quite enough for them. But for servers and powerful workstations, two-, four- and even eight-rank solutions are produced.

Note that other things being equal, a larger number of ranks allows achieving larger volumes, however, it requires more computing power and increases the load on the system.

CAS latency

This term refers to the time (more precisely, the number of memory cycles) that passes from the processor's request to read data to granting access to the first of the cells containing the selected data. CAS latency is one of the timings (for more details, see the "Memory Timings Scheme" section, where this parameter is designated as CL) — which means that it affects performance: the lower the CAS, the faster this memory module works. However this is true only for the same clock frequency (for more details, see ibid.).

Now there are memory modules on the market with the following CAS latency values: 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 24, 30, 32, 36, 38, 40, 42, 46.

Memory timing

Timing is a term that refers to the time it takes to complete an operation. To understand the timing scheme, you need to know that structurally RAM consists of banks (from 2 to 8 per module), each of which, in turn, has rows and columns, like a table; when accessing memory, the bank is selected first, then the row, then the column. The timing scheme shows the time during which the four main operations are performed when working with RAM, and is usually written in four digits in the format CL-Trcd-Trp-Tras, where

CL is the minimum delay between receiving a command to read data and the start of their transfer;

Trcd — the minimum time between the selection of a row and the selection of a column in it;

Trp is the minimum time to close a row, that is, the delay between the signal and the actual closing. Only one bank line can be opened at a time; Before opening the next line, you must close the previous one.

Tras — the minimum time the row is active, in other words, the shortest time after which the row can be commanded to close after it has been opened.

Time in the timing scheme is measured in cycles, so the actual memory performance depends not only on the timing scheme, but also on the clock frequency. For example, 1600 MHz 8-8-8-24 memory will run at the same speed as 800 MHz 4-4-4-12 memory—in either case timings, if expressed in nanoseconds, will be 5-5-5-15.
Samsung DDR4 1x4Gb often compared
Hynix DDR4 1x4Gb often compared