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Comparison Silicon Power Velox V55 SP120GBSS3V55S25 120 GB vs Silicon Power Slim S55 SP120GBSS3S55S25 120 GB

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Silicon Power Velox V55 SP120GBSS3V55S25 120 GB
Silicon Power Slim S55 SP120GBSS3S55S25 120 GB
Silicon Power Velox V55 SP120GBSS3V55S25 120 GBSilicon Power Slim S55 SP120GBSS3S55S25 120 GB
from $63.00
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from £60.09 
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Placementinternalinternal
Size120 GB120 GB
Form factor2.5"2.5"
InterfaceSATA 3SATA 3
Technical specs
ControllerPhison PS3108-S8Phison PS3108-S8
Memory typeTLC3D TLC NAND
Write speed475 MB/s370 MB/s
Read speed556 MB/s460 MB/s
Shockproof1500 G1500 G
MTBF1.5 m h
Write IOPS78 K78 K
Manufacturer's warranty3 years3 years
General
TRIM
Size70х100x9 mm100x70x15 mm
Weight79 g63 g
Added to E-Catalogjune 2013june 2013

Memory type

The type of the main memory of the drive determines the features of the distribution of information over hardware cells and the physical features of the cells themselves.

MLC. Multi Level Cell memory based on multi-level cells, each of which contains several signal levels. MLC memory cells store 2 bits of information. Has optimum indicators of reliability, power consumption and productivity. Until recently, the technology was popular in entry-level and mid-range SSD modules, now it is gradually being replaced by more advanced options in the manner of TLC or 3D MLC.

TLC. The evolution of MLC technology. One Flash Memory Triple Level Cell can store 3 bits of information. Such a recording density somewhat increases the likelihood of errors compared to MLC, in addition, TLC memory is considered less durable. A positive feature of the nature of this technology is its affordable cost, and various design tricks can be used to improve reliability in SSDs with TLC memory.

3D NAND. In a 3D NAND structure, several layers of memory cells are arranged vertically, and interconnections are organized between them. This provides greater storage capacity without increasing the physical size of the drive and improves memory performance due to shorter connections for each memory cell. In SSD drives, 3D NAND memory can use MLC, TLC or QLC chips - more details...about them are described in the corresponding help paragraphs.

3D MLC NAND. MLC-memory has a multilayer structure — its cells are placed on the board not in one level, but in several "floors". As a result, manufacturers have achieved an increase in storage capacity without a noticeable increase in size. Also, 3D MLC NAND memory is characterized by higher reliability than the original MLC (see the relevant paragraph), at a lower manufacturing cost.

3D TLC NAND. "Three-dimensional" modification of the TLC technology (see the relevant paragraph) with the placement of memory cells on the board in several layers. This arrangement allows you to achieve higher capacity with smaller sizes of the drives themselves. In production, such memory is simpler and cheaper than a single-layer one.

3D QLC NAND. Quad Level Cell flash type with 4 bits of data in each cell. The technology is designed to make SSDs with large volumes widely available and finally retire traditional HDDs. In the 3D QLC NAND configuration, the memory is built according to a “multi-level” scheme with the placement of cells on the board in several layers. "Three-dimensional" structure reduces the cost of production of memory modules and allows you to increase the volume of drives without compromising their weight and size component.

3D XPoint. A fundamentally new type of memory, radically different from traditional NAND. In such drives, memory cells and selectors are located at the intersections of perpendicular rows of conductive tracks. The mechanism for recording information in cells is based on changing the resistance of the material without the use of transistors. 3D XPoint memory is simple and inexpensive to produce, and offers much better speed and durability. The prefix "3D" in the name of the technology says that the cells on the crystal are placed in several layers. The first generation of 3D XPoint received a two-layer structure and was made using a 20-nanometer process technology.

Write speed

The highest speed in write mode characterizes the speed with which the module can receive information from a connected computer (or other external device). This speed is limited both by the connection interface (see "Connector"), and by the characteristics of the device of the SSD itself.

Read speed

The highest data exchange rate with a computer (or other external device) that the drive can provide in read mode; in other words — the highest speed of information output from the drive to an external device. This speed is limited both by the connection interface (see "Connector"), and by the characteristics of the device of the SSD itself. Its values can vary from 100 – 500 MB / s in the slowest models to 3 Gb / s and higher in the most advanced ones.

MTBF

The drive's time between failures is the time that it is able to continuously work without failures and malfunctions; in other words — the operating time, after which there is a high probability of failures, and even failure of the module.

Usually, the characteristics indicate some average time derived from the results of conditional testing. Therefore, the actual value of this parameter may differ from the claimed one in one direction or another; however, in fact, this moment is not particularly significant. The fact is that for modern SSDs, the MTBF is estimated at millions of hours, and 1 million hours corresponds to more than 110 years — while we are talking about pure operating time. So, from a practical point of view, the durability of a drive is often limited by more specific parameters — TBW and DPWD (see below); and the manufacturer's warranty generally does not exceed several years. However, data on the MTBF in hours can also be useful when choosing: other things being equal, more time means more reliability and durability of the SSD as a whole.
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Silicon Power Slim S55 often compared